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 RMPA1759
September 2004
RMPA1759
Korean-PCS PowerEdgeTM Power Amplifier Module
General Description
The RMPA1759 power amplifier module (PAM) is designed for Korean CDMA and CDMA2000-1X personal communications system (PCS) applications. The 2 stage PAM is internally matched to 50 to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) process.
Features
* Single positive-supply operation and low power and shutdown modes * 38% CDMA efficiency at +28dBm average output power * Compact LCC package- 4.0 x 4.0 x 1.5 mm with industry standard pinout * Internally matched to 50 and DC blocked RF input/ output. * Meets CDMA2000-1XRTT performance requirements
Device
Absolute Ratings1
Symbol Vcc1, Vcc2 Vref Vmode Pin TSTG Parameter Supply Voltages Reference Voltage Power Control Voltage RF Input Power Storage Temperature Value 5.0 2.6 to 3.5 3.5 +10 -55 to +150 Units V V V dBm C
Note: 1: No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.
(c)2004 Fairchild Semiconductor Corporation
RMPA1759 Rev. C
RMPA1759
Module Block Diagram
VCC1, VCC2 (1, 10)
COLLECTOR BIAS
PA MODULE
GND (3,6, 7, 9, 11)
INTERSTAGE MATCH INPUT MATCHING NETWORK INPUT STAGE OUTPUT STAGE OUTPUT MATCHING NETWORK
RF IN (2)
MMIC
RF OUT (8)
INPUT STAGE BIAS
OUTPUT STAGE BIAS
VREF (5)
BIAS CONTROL
VCC=3.4V (nom) VREF=2.85V (nom) 1720-1780 MHz 50 I/O
Vmode (4)
Electrical Characteristics1
Symbol Parameter f Operating Frequency CDMA Operation SSg Small-Signal Gain Gp Power Gain Po Linear Output Power PAE (digital) @ +28 dBm PAE (digital) @ +16 dBm PAEd (digital) @ +16 dBm Itot High Power Total Current Low Power Total Current Adjacent Channel Power Ratio ACPR1 1.25 MHz Offset PAEd Min 1720 Typ Max 1780 Units MHz dB dB dBm dBm % % % mA mA dBc dBc dBc dBc Comments
26 27 28 16 38 9 20 490 120 -50 -48 -60 -62
Po = 0 dBm Po = +28 dBm; Vmode = 0V Vmode = 0V Vmode 2.0V Vmode = 0V Vmode 2.0V Vmode 2.0V, Vcc = 1.4V Po = +28 dBm, Vmode = 0V Po = +16 dBm, Vmode = 2.0V Po = +28 dBm; Vmode = 0V, IS-95 Po = +28 dBm; Vmode = 0.0V, CDMA2000-1X Po = +28 dBm; Vmode = 0V, IS-95 Po = +28 dBm; Vmode = 0.0V, CDMA2000-1X
ACPR2 2.25 MHz Offset
General Characteristics VSWR Input Impedance NF Noise Figure Rx No Receive Band Noise Power 2fo-5fo Harmonic Suppression S Spurious Outputs2, 3 Ruggedness w/ Load Mismatch3 Tc Case Operating Temperature
2.0:1 4 -139 -30 -60 10:1 85
-30
dB dBm/Hz Po +28 dBm; 1920 to 1980 MHz dBc Po +28 dBm dBc Load VSWR 5.0:1 No permanent damage. C
(c)2004 Fairchild Semiconductor Corporation
RMPA1759 Rev. C
RMPA1759
Symbol Parameter DC Characteristics Iccq Quiescent Current Iref Reference Current Icc(off) Shutdown Leakage Current
Min
Typ 50 5 1
Max
Units mA mA A
Comments Vmode 2.0V Po +28 dBm No applied RF signal.
8 10
Notes: 1: All parameters met at Tc = +25C, Vcc = +3.4V, f=1950 MHz and load VSWR 1.2:1. 2: All phase angles. 3: Guaranteed by design.
Recommend Operating Conditions
Symbol f Vcc1, Vcc2 Vref Parameter Operating Frequency Supply Voltage Reference Voltage (Operating) (Shutdown) Bias Control Voltage (low-power) (high-power) Linear Output Power (high-power) (low-power) Case Operating Temperature Min 1720 3.0 2.7 0 1.8 0 Typ 3.4 2.85 Max 1780 4.2 3.1 0.5 3.0 0.5 +28 +16 +85 Units MHz V V V V V dBm dBm C
Vmode
2.0
Pout
Tc
-30
Note: 1: RF input power for CDMA Pout = +28dBm.
(c)2004 Fairchild Semiconductor Corporation
RMPA1759 Rev. C
RMPA1759
Evaluation Board Layout
Evaluation Board Schematic
3.3 F SMA1 RF IN Vcc1 2 50 TRL 4 Vmode 1000 pF Vref 5 0.1 F 11 (package base) 1000 pF 1000 pF 10 3.3 F Vcc2 50 TRL SMA2 RF OUT
Fairchild
RMPA1759 PPYYWW
8
3,6,7,9
(c)2004 Fairchild Semiconductor Corporation
RMPA1759 Rev. C
RMPA1759
Package Outline
I/O 1 INDICATOR TOP VIEW 1 2 10
FRF
PA1959 PPYYWW U31XX
9 8 7 6
(4.00mm
+.100 -.050 )
SQUARE
3 4 5
1.60mm MAX.
FRONT VIEW .25mm TYP. 3.50mm TYP. See Detail A .40mm .30mm TYP. .85mm TYP. 11 3.65mm .10mm .10mm .40mm .45mm
1.08mm 1.84mm BOTTOM VIEW
.18mm
DETAIL A. TYP.
Package Pinout
Pin # 1 2 3 4 5 6 7 8 9 10 11 Symbol Vcc1 RF In GND Vmode Vref GND GND RF Out GND Vcc2 GND Description Supply Voltage to Input Stage RF Input Signal Ground High-Power/Low-Power Mode Control Reference Voltage Ground Ground RF Output Signal Ground Supply Voltage to Output Stage Paddle Ground
DC Turn-On Sequence
1) Vcc1 = Vcc2 = 3.4V (typical) 2) Vref = 2.85V (typical) 3) Vmode = 2.0V (Pout < 16dBm), 0V (Pout > 16dBm)
(c)2004 Fairchild Semiconductor Corporation
RMPA1759 Rev. C
RMPA1759
Application Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE
Precautions to Avoid Permanent Device Damage: * Cleanliness: Observe proper handling procedures to ensure clean devices and PCBs. Devices should remain in their original packaging until component placement to ensure no contamination or damage to RF, DC & ground contact areas. * Device Cleaning: Standard board cleaning techniques should not present device problems provided that the boards are properly dried to remove solvents or water residues. * Static Sensitivity: Follow ESD precautions to protect against ESD damage: - A properly grounded static-dissipative surface on which to place devices. - Static-dissipative floor or mat. - A properly grounded conductive wrist strap for each person to wear while handling devices. * General Handling: Handle the package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. Avoiding damaging the RF, DC, & ground contacts on the package bottom. Do not apply excessive pressure to the top of the lid. * Device Storage: Devices are supplied in heat-sealed, moisture-barrier bags. In this condition, devices are protected and require no special storage conditions. Once the sealed bag has been opened, devices should be stored in a dry nitrogen environment. Device Usage: Fairchild recommends the following procedures prior to assembly. * Dry-bake devices at 125C for 24 hours minimum. Note: The shipping trays cannot withstand 125C baking temperature. * Assemble the dry-baked devices within 7 days of removal from the oven. * During the 7-day period, the devices must be stored in an environment of less than 60% relative humidity and a maximum temperature of 30C * If the 7-day period or the environmental conditions have been exceeded, then the dry-bake procedure must be repeated. Solder Materials & Temperature Profile: Reflow soldering is the preferred method of SMT attachment. Hand soldering is not recommended. * Reflow Profile - Ramp-up: During this stage the solvents are evaporated from the solder paste. Care should be taken to prevent rapid oxidation (or paste slump) and solder bursts caused by violent solvent out-gassing. A typical heating rate is 1- 2C/sec. - Pre-heat/soak: The soak temperature stage serves two purposes; the flux is activated and the board and devices achieve a uniform temperature. The recommended soak condition is: 120-150 seconds at 150C. - Reflow Zone: If the temperature is too high, then devices may be damaged by mechanical stress due to thermal mismatch or there may be problems due to excessive solder oxidation. Excessive time at temperature can enhance the formation of intermetallic compounds at the lead/board interface and may lead to early mechanical failure of the joint. Reflow must occur prior to the flux being completely driven off. The duration of peak reflow temperature should not exceed 10 seconds. Maximum soldering temperatures should be in the range 215-220C, with a maximum limit of 225C. - Cooling Zone: Steep thermal gradients may give rise to excessive thermal shock. However, rapid cooling promotes a finer grain structure and a more crackresistant solder joint. The illustration below indicates the recommended soldering profile. Solder Joint Characteristics: Proper operation of this device depends on a reliable voidfree attachment of the heatsink to the PWB. The solder joint should be 95% void-free and be a consistent thickness. Rework Considerations: Rework of a device attached to a board is limited to reflow of the solder with a heat gun. The device should not be subjected to more than 225C and reflow solder in the molten state for more than 5 seconds. No more than 2 rework operations should be performed.
(c)2004 Fairchild Semiconductor Corporation
RMPA1759 Rev. C
RMPA1759
240 220 200 183C 180 160 140 DEG (C) 120 100 80 60 40 20 0 0 60 120 TIME (SEC) 180 1C/SEC SOAK AT 150C FOR 60 SEC
10 SEC
45 SEC (MAX) ABOVE 183C
1C/SEC
240
300
Figure 1. Recommended Solder Reflow Profile
(c)2004 Fairchild Semiconductor Corporation
RMPA1759 Rev. C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM
ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC Across the board. Around the world.TM OPTOPLANARTM PACMANTM The Power Franchise POPTM Programmable Active DroopTM
Power247TM PowerEdgeTM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM
StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I13


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